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首頁(yè) >IXFR12N100Q>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IXFR12N100Q	文件：33.66 Kbytes Page：2 Pages	N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Corporation	IXYS
IXFR12N100Q	文件：160.52 Kbytes Page：2 Pages	HiPerFET Power MOSFETs ISOPLUS247 Q CLASS HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Corporation	IXYS
IXFT12N100	文件：556.28 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou	IXYS IXYS Corporation	IXYS
IXFT12N100F	文件：99.7 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ?	IXYS IXYS Corporation	IXYS
IXFT12N100F	文件：112.65 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFT12N100Q	文件：146.65 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Corporation	IXYS
IXFT12N100QHV	文件：205.72 Kbytes Page：5 Pages	HighVoltagePowerMOSFET	IXYS IXYS Corporation	IXYS
IXFV12N100P	文件：181.15 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc	IXYS IXYS Corporation	IXYS
IXFV12N100PS	文件：181.15 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc	IXYS IXYS Corporation	IXYS
IXGA12N100	文件：51.49 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper	IXYS IXYS Corporation	IXYS
IXGA12N100A	文件：51.49 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper	IXYS IXYS Corporation	IXYS
IXGH12N100	文件：151.39 Kbytes Page：5 Pages	LowVCE(sat)IGBTwithDiodeHighSpeedIGBTwithDiode Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Voltageratingguaranteedathightemperature(125C) Applicati	IXYS IXYS Corporation	IXYS
IXGP12N100	文件：51.49 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper	IXYS IXYS Corporation	IXYS
IXGP12N100A	文件：51.49 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper	IXYS IXYS Corporation	IXYS
IXTH12N100	文件：106.76 Kbytes Page：4 Pages	MegaMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(	IXYS IXYS Corporation	IXYS
IXTH12N100	文件：367.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTH12N100L	文件：377.22 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ·FEATURES ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTH12N100L	文件：153.46 Kbytes Page：5 Pages	LinearTMPowerMOSFETw/ExtendedFBSOA Linear?PowerMOSFETw/ExtendedFBSOA N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackage ?DesignedforLinearOperation ?AvalancheRated ?MoldingEpoxyMeetsUL94V-0 FlammabilityClassification Advantages ?EasytoMount ?SpaceSavings ?High	IXYS IXYS Corporation	IXYS
IXTH12N100Q	文件：9.05 Kbytes Page：1 Pages	NotforNewDesigns:Contactthefactoryforleadtimes(partisstillavailableforpurchase).	etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商	etc2
IXTM12N100	文件：106.76 Kbytes Page：4 Pages	MegaMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(	IXYS IXYS Corporation	IXYS

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型號(hào)：
IXFR12N100Q
功能描述：
MOSFET 12 Amps 1000V 1 Rds
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	IXFR12N100Q	IXYS	24+	ISOPLUS247?	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢(xún)價(jià)
深圳和潤(rùn)天下電子科技有限公司	IXFR12N100Q	IXYS/艾賽斯	23+	TO-247I	59580	原裝正品華強(qiáng)現(xiàn)貨	詢(xún)價(jià)
深圳市永貝爾科技有限公司	IXFR12N100Q	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	IXFR12N100Q	IXYS	18+	TO-247	2050	公司大量全新原裝正品隨時(shí)可以發(fā)貨	詢(xún)價(jià)
深圳市艾宇欣科技有限公司	IXFR12N100Q	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢(xún)價(jià)
深圳兆威電子有限公司	IXFR12N100Q	IXYS/艾賽斯	23+	ISOPLUS247	90000	只做原廠渠道價(jià)格優(yōu)勢(shì)可提供技術(shù)支持	詢(xún)價(jià)
深圳市科雨電子有限公司	IXFR12N100Q	IXYS	1809+	TO-247	326	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢(xún)價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	IXFR12N100Q	IXYS/艾賽斯	23+	ISOPLUS247	10000	公司只做原裝正品	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	IXFR12N100Q	IXYS/艾賽斯	23+	ISOPLUS247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市易訊博科技有限公司	IXFR12N100Q	IXYS	22+	NA	18	加我QQ或微信咨詢(xún)更多詳細(xì)信息,	詢(xún)價(jià)

更多IXFR12N100Q供應(yīng)商更新時(shí)間2024-10-27 14:14:00

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