首頁 >IXFR12N100Q>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IXFR12N100Q | N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface | IXYS IXYS Corporation | IXYS | |
IXFR12N100Q | HiPerFET Power MOSFETs ISOPLUS247 Q CLASS HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface | IXYS IXYS Corporation | IXYS | |
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ? | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ● | IXYS IXYS Corporation | IXYS | ||
HighVoltagePowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc | IXYS IXYS Corporation | IXYS | ||
IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper | IXYS IXYS Corporation | IXYS | ||
IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper | IXYS IXYS Corporation | IXYS | ||
LowVCE(sat)IGBTwithDiodeHighSpeedIGBTwithDiode Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Voltageratingguaranteedathightemperature(125C) Applicati | IXYS IXYS Corporation | IXYS | ||
IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper | IXYS IXYS Corporation | IXYS | ||
IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper | IXYS IXYS Corporation | IXYS | ||
MegaMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ·FEATURES ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
LinearTMPowerMOSFETw/ExtendedFBSOA Linear?PowerMOSFETw/ExtendedFBSOA N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackage ?DesignedforLinearOperation ?AvalancheRated ?MoldingEpoxyMeetsUL94V-0 FlammabilityClassification Advantages ?EasytoMount ?SpaceSavings ?High | IXYS IXYS Corporation | IXYS | ||
NotforNewDesigns:Contactthefactoryforleadtimes(partisstillavailableforpurchase). | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
MegaMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號(hào)：
IXFR12N100Q
- 功能描述：
MOSFET 12 Amps 1000V 1 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
ISOPLUS247? |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247I |
59580 |
原裝正品 華強(qiáng)現(xiàn)貨 |
詢價(jià) | ||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
2050 |
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
ISOPLUS247 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
ISOPLUS247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
IXYS/艾賽斯 |
21+ |
ISOPLUS247 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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