无码av在线一区二区三区,日本高潮少妇一区二区三区

首頁 >IXFR24N100>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFR24N100	文件：36.22 Kbytes Page：2 Pages	HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface) HiPerFET?PowerMOSFETISOPLUS247?(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacit	IXYS IXYS Corporation	IXYS
IXFR24N100	文件：330.4 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR24N100_08	文件：118.77 Kbytes Page：4 Pages	HiPerFET Power MOSFET ISOPLUS247	IXYS IXYS Corporation	IXYS
IXFR24N100Q3	文件：148.62 Kbytes Page：5 Pages	N-Channel Enhancement Mode Fast Intrinsic Rectifier	IXYS IXYS Corporation	IXYS
IXFE24N100	文件：428.31 Kbytes Page：2 Pages	SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?FastintrinsicRectifier Applications ?DC-DCconverters ?Batte	IXYS IXYS Corporation	IXYS
IXFF24N100	文件：72.28 Kbytes Page：2 Pages	HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features ?HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode ?ISOPLUSI4-PAC?highvoltagepackage -isolatedbacksurface -enlargedcree	IXYS IXYS Corporation	IXYS
IXFK24N100	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXFK24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFK24N100	文件：329.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK24N100F	文件：329.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance	IXYS IXYS Corporation	IXYS
IXFK24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXFN24N100	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFN24N100	文件：91.67 Kbytes Page：4 Pages	HiPerFET-TMPowerMOSFET Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFN24N100F	文件：108 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Corporation	IXYS
IXFN24N100F	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFX24N100	文件：367.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFX24N100	文件：139.35 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFX24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance	IXYS IXYS Corporation	IXYS

12 >>>

詳細(xì)參數(shù)

型號(hào)：
IXFR24N100
功能描述：
MOSFET 1KV 22A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	IXFR24N100	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
瀚佳科技(深圳)有限公司	IXFR24N100	IXYS	24+	TO-247	2050	公司大量全新原裝正品隨時(shí)可以發(fā)貨	詢價(jià)
深圳市艾宇欣科技有限公司	IXFR24N100	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
深圳市科雨電子有限公司	IXFR24N100	IXYS	1809+	TO-247	326	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	IXFR24N100	IXYS/艾賽斯	23+	ISOPLUS247	10000	公司只做原裝正品	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IXFR24N100	IXYS	23+	TO-247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市易訊博科技有限公司	IXFR24N100	IXYS	22+	NA	18	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市河鋒鑫科技有限公司	IXFR24N100	IXYS	22+	ISOPLUS247?	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IXFR24N100	IXYS	21+	ISOPLUS247?	13880	公司只售原裝,支持實(shí)單	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IXFR24N100	IXYS/艾賽斯	23+	ISOPLUS247	5000	一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價(jià)

更多IXFR24N100供應(yīng)商更新時(shí)間2025-1-1 9:01:00

詳細(xì)參數(shù)

相關(guān)規(guī)格書

相關(guān)庫存