首頁 >IXFT13N80Q>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IXFT13N80Q

HiPerFET Power MOSFETs Q Class

N-ChannelEnhancementMode AvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easy

IXYS

IXYS Corporation

FQA13N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA13N80

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA13N80

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA13N80

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF13N80

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF13N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8.0A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HFH13N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXFH13N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH13N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH13N80Q

HiPerFETPowerMOSFETsQClass

N-ChannelEnhancementMode AvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easy

IXYS

IXYS Corporation

IXFH13N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM13N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM13N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXKC13N80C

CoolMOSPowerMOSFETISOPLUS220

IXYS

IXYS Corporation

IXKC13N80C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH13N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH13N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTM13N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號:

    IXFT13N80Q

  • 功能描述:

    MOSFET 13 Amps 800V 0.8 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IXYS
24+
TO-268AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IXYS/艾賽斯
23+
TO-268
90000
只做原廠渠道價(jià)格優(yōu)勢可提供技術(shù)支持
詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品,支持實(shí)單
詢價(jià)
更多IXFT13N80Q供應(yīng)商 更新時(shí)間2024-10-27 10:12:00