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IXFR180N07

HiPerFET Power MOSFETs ISOPLUS247

SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR180N07

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=180A@TC=25℃ ·DrainSourceVoltage :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK180N07

PowerMOSFETs

IXYS

IXYS Corporation

IXFK180N07

HiPerFETPowerMOSFETs

HiperFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?AvalancheRated ?LowIntrinsicGateResistance ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensi

IXYS

IXYS Corporation

IXFN180N07

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated

IXYS

IXYS Corporation

IXFX180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX180N07

PowerMOSFETs

IXYS

IXYS Corporation

IXFX180N07

HiPerFETPowerMOSFETs

HiperFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?AvalancheRated ?LowIntrinsicGateResistance ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensi

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFR180N07

  • 功能描述：

    MOSFET 180 Amps 70V 0.006 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
2024+
ISOPLUS247
32560
原裝優(yōu)勢絕對有貨
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
ISOPLUS247
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS/艾賽斯
21+
to-247
10000
原裝現(xiàn)貨假一罰十
 詢價
IXYS
22+
ISOPLUS247?
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
ISOPLUS247?
13880
公司只售原裝,支持實單
 詢價
IXYS/艾賽斯
23+
ISOPLUS247
6000
原裝正品，支持實單
 詢價
IXYS
05+
to-247
9
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IXFR180N07供應(yīng)商 更新時間2025-1-1 11:00:00

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