首頁(yè) >IXFR200N10P>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXFR200N10P | PolarTM HiPerFET Power MOSFET | IXYS IXYS Corporation | IXYS | |
IXFR200N10P | Power MOSFET | IXYS IXYS Corporation | IXYS | |
Polar HiPerFET Power MOSFET | IXYS IXYS Corporation | IXYS | ||
Power MOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=200A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACandDCMotorDrives | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
TrenchMVPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
TrenchMVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHTTMPowerMOSFET PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
TrenchMVTMPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
TrenchMVTMPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
TrenchMVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarTMHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
TrenchMVPowerMOSFET | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號(hào):
IXFR200N10P
- 功能描述:
MOSFET 133 Amps 100V 0.0075 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
ISOPLUS247? |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247I |
65000 |
原裝正品 華強(qiáng)現(xiàn)貨 |
詢價(jià) | ||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
2050 |
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
I |
23+ |
ISOPLUS247 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
IXYS |
22+ |
ISOPLUS247? |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IXYS |
21+ |
ISOPLUS247? |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) |
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