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IXFX64N60P

PolarHVTM HiPerFET Power MOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features) ●Internationalstandardpackages ●Fastrecoverydiode ●UnclampedInductiveSwitching(UIS) rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●High

IXYS

IXYS Corporation

IXFX64N60P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advantages ●EasytoMount ●SpaceSavings Applications ●DC-DCCon

IXYS

IXYS Corporation

IXFX64N60P3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=64A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=100mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK64N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK64N60P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features) ●Internationalstandardpackages ●Fastrecoverydiode ●UnclampedInductiveSwitching(UIS) rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●High

IXYS

IXYS Corporation

IXFN64N60P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedp

IXYS

IXYS Corporation

IXFR64N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFR64N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFX64N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=96mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFX64N60P

  • 功能描述：

    MOSFET MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
PLUS247?-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
IXYS/艾賽斯
23+
TO-247 PLUS
59580
原裝正品 華強(qiáng)現(xiàn)貨
 詢(xún)價(jià)
IXYS
24+
PLUS247
190
詢(xún)價(jià)
IXYS
1215+
TO-247
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
 詢(xún)價(jià)
IXYS
1931+
N/A
419
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢(xún)價(jià)
IXYS/艾賽斯
2447
20
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
IXYS
22+
NA
419
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
IXYS/艾賽斯
21+
TO-3P
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢(xún)價(jià)
更多IXFX64N60P供應(yīng)商 更新時(shí)間2025-3-23 10:11:00

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