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IS41LV16100B-50KLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50KLI

包裝:卷帶(TR) 封裝/外殼:42-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 16MBIT PARALLEL 42SOJ

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50KLI-TR

包裝:卷帶(TR) 封裝/外殼:42-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 16MBIT PARALLEL 42SOJ

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50KL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50KLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50TL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-50TLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50KL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50TL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-50TLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IS41LV16100B-50KLI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    卷帶(TR)

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    DRAM

  • 技術(shù):

    DRAM - EDO

  • 存儲(chǔ)容量:

    16Mb(1M x 16)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    42-BSOJ(0.400",10.16mm 寬)

  • 供應(yīng)商器件封裝:

    42-SOJ

  • 描述:

    IC DRAM 16MBIT PARALLEL 42SOJ

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISSI
23+
42-SOJ
73390
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
ISSI
2020+
SOJ-42
39
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
ISSI
2021+
N/A
6800
只有原裝正品
詢價(jià)
ISSI
2048+
SOJ
6541
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
ISSI, Integrated Silicon Solut
21+
42-SOJ
56200
一級(jí)代理/放心采購(gòu)
詢價(jià)
ISSI
2021+
SOJ
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
ISSI
20+
SOP-42
1001
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
ISSI
22+
SOJ
32350
原裝正品 假一罰十 公司現(xiàn)貨
詢價(jià)
ISSI
23+
SOJ
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
ISSI
22+
SOJ-42
8000
原裝正品支持實(shí)單
詢價(jià)
更多IS41LV16100B-50KLI供應(yīng)商 更新時(shí)間2024-10-30 16:30:00