首頁(yè) >IS41LV16100B-50KLI>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IS41LV16100B-50KLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
IS41LV16100B-50KLI | 包裝:卷帶(TR) 封裝/外殼:42-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 16MBIT PARALLEL 42SOJ | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
包裝:卷帶(TR) 封裝/外殼:42-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 16MBIT PARALLEL 42SOJ | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IS41LV16100B-50KLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
卷帶(TR)
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
DRAM
- 技術(shù):
DRAM - EDO
- 存儲(chǔ)容量:
16Mb(1M x 16)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
3V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
42-BSOJ(0.400",10.16mm 寬)
- 供應(yīng)商器件封裝:
42-SOJ
- 描述:
IC DRAM 16MBIT PARALLEL 42SOJ
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
23+ |
42-SOJ |
73390 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
ISSI |
2020+ |
SOJ-42 |
39 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
ISSI |
2021+ |
N/A |
6800 |
只有原裝正品 |
詢價(jià) | ||
ISSI |
2048+ |
SOJ |
6541 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
ISSI, Integrated Silicon Solut |
21+ |
42-SOJ |
56200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
ISSI |
2021+ |
SOJ |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
ISSI |
20+ |
SOP-42 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
ISSI |
22+ |
SOJ |
32350 |
原裝正品 假一罰十 公司現(xiàn)貨 |
詢價(jià) | ||
ISSI |
23+ |
SOJ |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
ISSI |
22+ |
SOJ-42 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- IS41LV16100B-50KLI-TR
- IS41LV16100B-50K-TR
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相關(guān)庫(kù)存
更多- IS41LV16100B-50KL-TR
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