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IS41LV16105B-50TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50K

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50KE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50KI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50KL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50KLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50KLI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50T

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50TE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50TL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50TLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16105B-50TLI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

詳細參數(shù)

  • 型號：

    IS41LV16105B-50TI

  • 功能描述：

    動態(tài)隨機存取存儲器 16M 1Mx16 50ns

  • RoHS：

    否

  • 制造商：

    ISSI

  • 數(shù)據(jù)總線寬度：

    16 bit

  • 組織：

    1 M x 16

  • 封裝/箱體：

    SOJ-42

  • 存儲容量：

    16 MB

  • 訪問時間：

    50 ns

  • 電源電壓-最大：

    7 V

  • 電源電壓-最?。?/span>

    - 1 V

  • 最大工作電流：

    90 mA

  • 最大工作溫度：

    + 85 C

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
SOP
7003
詢價
ISSI
1844+
TSSOP
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
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ISSI Integrated Silicon Soluti
22+
44TSOP II
9000
原廠渠道,現(xiàn)貨配單
 詢價
ISSI Integrated Silicon Soluti
21+
44TSOP II
13880
公司只售原裝,支持實單
 詢價
ISSI Integrated Silicon Soluti
23+
44TSOP II
9000
原裝正品，支持實單
 詢價
ISSI
23+
44-TSOPII
24840
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
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ISSI, Integrated Silicon Solut
21+
44-TSOP II
56200
一級代理/放心采購
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ISSI
20+
TSOP-44
1001
就找我吧!--邀您體驗愉快問購元件!
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ISSI
23+
MSOP10
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ISSI
05+
MSOP10
55
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多IS41LV16105B-50TI供應(yīng)商 更新時間2024-10-30 16:30:00

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