首頁 >IS41LV16256>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IS41LV16256 | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16256andIS41LV16256isa262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemories.TheIS41C16256offeranacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10n | ICSI Integrated Circuit Solution Inc | ICSI | |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16256andIS41LV16256are262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword. | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16256andIS41LV16256isa262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemories.TheIS41C16256offeranacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10n | ICSI Integrated Circuit Solution Inc | ICSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16256andIS41LV16256are262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword. | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16256andIS41LV16256isa262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemories.TheIS41C16256offeranacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10n | ICSI Integrated Circuit Solution Inc | ICSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16256andIS41LV16256isa262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemories.TheIS41C16256offeranacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10n | ICSI Integrated Circuit Solution Inc | ICSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16256andIS41LV16256isa262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemories.TheIS41C16256offeranacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10n | ICSI Integrated Circuit Solution Inc | ICSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16256andIS41LV16256are262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword. | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16256andIS41LV16256isa262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemories.TheIS41C16256offeranacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10n | ICSI Integrated Circuit Solution Inc | ICSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16256andIS41LV16256are262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword. | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16256andIS41LV16256are262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword. | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16256andIS41LV16256isa262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemories.TheIS41C16256offeranacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10n | ICSI Integrated Circuit Solution Inc | ICSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16256andIS41LV16256are262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword. | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16256Bis262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword.TheByteWrit | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16256Bis262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword.TheByteWrit | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16256Bis262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword.TheByteWrit | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16256Bis262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword.TheByteWrit | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16256Bis262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword.TheByteWrit | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16256Bis262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword.TheByteWrit | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI | ||
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16256Bis262,144x16-bithigh-performanceCMOSDynamicRandomAccessMemory.BothproductsofferacceleratedcycleaccessEDOPageMode.EDOPageModeallows512randomaccesseswithinasinglerowwithaccesscycletimeasshortas10nsper16-bitword.TheByteWrit | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導體有限公司 | ISSI |
詳細參數(shù)
- 型號：
IS41LV16256
- 制造商：
ICSI
- 制造商全稱：
Integrated Circuit Solution Inc
- 功能描述：
256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
22+ |
2560 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||||
ICSI |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ISSI |
99+ |
SOJ40 |
211 |
特價銷售歡迎來電!! |
詢價 | ||
ISSI |
23+ |
SOJ/40 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
ISSI |
23+ |
TSSOP-40P |
35890 |
詢價 | |||
24+ |
TSSOP |
7003 |
詢價 | ||||
ISSI |
17+ |
SOJ |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
ISSI |
2020+ |
SOJ-40 |
68 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ISSI |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
ISSI |
2339+ |
SOJ |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 |
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相關庫存
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