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IS41LV16100B-60KLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60KLI

包裝：卷帶（TR） 封裝/外殼：42-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC DRAM 16MBIT PARALLEL 42SOJ

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS41LV16100B-60KLI-TR

包裝：卷帶（TR） 封裝/外殼：42-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC DRAM 16MBIT PARALLEL 42SOJ

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

41LV16100B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

41LV16100B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

41LV16100B-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

41LV16100B-60KLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

41LV16100B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

41LV16100B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

41LV16100B-60TL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

41LV16100B-60TLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60TL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100B-60TLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IS41LV16100B-60KLI

  • 制造商：

    ISSI, Integrated Silicon Solution Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    卷帶（TR）

  • 存儲器類型：

    易失

  • 存儲器格式：

    DRAM

  • 技術(shù)：

    DRAM - EDO

  • 存儲容量：

    16Mb（1M x 16）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    3V ~ 3.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    42-BSOJ（0.400"，10.16mm 寬）

  • 供應商器件封裝：

    42-SOJ

  • 描述：

    IC DRAM 16MBIT PARALLEL 42SOJ

供應商型號品牌批號封裝庫存備注價格
ISSI
23+
TSOP
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
ISSI
23+
42-SOJ
36430
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
ISSI
24+
9850
公司原裝現(xiàn)貨/隨時可以發(fā)貨
 詢價
ISSI
20+
SOP-42
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
ISSI
23+
TSOP
4716
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
ISSI
23+
TSOP
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
ISSI
2023+
TSOP
3587
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
ISSI Integrated Silicon Soluti
23+/24+
42-BSOJ
8600
只供原裝進口公司現(xiàn)貨+可訂貨
 詢價
更多IS41LV16100B-60KLI供應商 更新時間2025-1-16 11:07:00

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