DESCRIPTION

TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

FEATURES

? TTL compatible inputs and outputs; tristate I/O

? Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

? JEDEC standard pinout

? Single power supply: 3.3V ± 10

? Byte Write and Byte Read operation via two CAS

? Industrial Temperature Range: -40oC to +85oC

? Lead-free available

IS41LV16100B-60KLI屬于集成電路（IC） > 存儲器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS41LV16100B-60KLI存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。