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IS41LV16100B-60KL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60KL

包裝:卷帶(TR) 封裝/外殼:42-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 16MBIT PARALLEL 42SOJ

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60KLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60KLI-TR

包裝:卷帶(TR) 封裝/外殼:42-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 16MBIT PARALLEL 42SOJ

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60KL-TR

包裝:卷帶(TR) 封裝/外殼:42-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 16MBIT PARALLEL 42SOJ

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60KLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60TL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

41LV16100B-60TLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60TL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100B-60TLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS41LV16100B-60KL

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    卷帶(TR)

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    DRAM

  • 技術(shù):

    DRAM - EDO

  • 存儲(chǔ)容量:

    16Mb(1M x 16)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    42-BSOJ(0.400",10.16mm 寬)

  • 供應(yīng)商器件封裝:

    42-SOJ

  • 描述:

    IC DRAM 16MBIT PARALLEL 42SOJ

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ISSI
23+
42-SOJ
73390
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
詢價(jià)
ISSI, Integrated Silicon Solut
21+
42-SOJ
56200
一級代理/放心采購
詢價(jià)
ISSIINTEGRATEDSILICONSOLUTIONI
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價(jià)
ISSI
20+
SOP-42
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INTEGRATED SILICON SOLUTION
2023+
SMD
14513
安羅世紀(jì)電子只做原裝正品貨
詢價(jià)
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI Integrated Silicon Solut
24+
42-BSOJ(0.400 10.16mm 寬)
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
ISSI
23+
TSOP
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
ISSI
23+
TSOP
4716
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價(jià)
更多IS41LV16100B-60KL供應(yīng)商 更新時(shí)間2024-10-30 16:30:00