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IRF630F

N-channelmosfettransistor

?Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FI

iscN-ChannelMOSFETTransistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=0.4Ω ?6Aand200V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfer

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630FP

N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FP

N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630M

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630M

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-Channel200V(D-S)MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF630BTSTU

  • 制造商：

    Rochester Electronics LLC

  • 制造商：

    Fairchild Semiconductor Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
onsemi(安森美)
23+
-
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
FSC/ON
23+
原包裝原封 □□
68000
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫存
 詢價(jià)
FAIRCHILD/仙童
23+
68000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
Fairchild/ON
22+
TO2203 Cropped Leads
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Fairchild/ON
21+
TO2203 Cropped Leads
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Fairchild/ON
23+
TO2203 Cropped Leads
9000
原裝正品，支持實(shí)單
 詢價(jià)
ON Semiconductor
2022+
TO-220-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
2022
TO220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
更多IRF630BTSTU供應(yīng)商 更新時(shí)間2025-2-15 9:11:00

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