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IRF630MFP

N-Channel 200 V (D-S) MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRF630MFP

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF630MFP

N-channel 200V - 0.35廓 - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF630N

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630N

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630N

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF630N

iscN-ChannelMOSFETTransistor

?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630N

FastSwitchingSpeed

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630N

N-ChannelMOSFETTransistor

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

詳細參數

  • 型號：

    IRF630MFP

  • 制造商：

    ST

  • 功能描述：

    N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET

供應商型號品牌批號封裝庫存備注價格
11+
9680
詢價
ST
24+
TO-220F
559053
詢價
ST
06+
原廠原裝
1851
只做全新原裝真實現貨供應
 詢價
ST/進口原
17+
TO-220F
6200
詢價
ST/進口原
24+
TO-220F
5000
只做原裝公司現貨
 詢價
ST
1816+
TO-220F
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
ST
20+
TO-220F
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ST
23+
TO-220F
30000
代理全新原裝現貨,價格優(yōu)勢
 詢價
ST/意法
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價
VBsemi(臺灣微碧)
2447
TO220F
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期
 詢價
更多IRF630MFP供應商 更新時間2025-2-25 16:52:00

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