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MJD112

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationsinPlastic

Motorola

Motorola, Inc

MJD112

Complementary Darlington Power Transistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD112

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

MJD112

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain. :hFE=1000(Min.),VCE=4V,IC=1A. ?LowCollector-EmitterSaturationVoltage. ?StraightLead(IPAK,LSuffix) ?ComplementarytoMJD117/L.

KECKEC CORPORATION

KEC株式會社

MJD112

D-PAK for Surface Mount Applications

Features ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications(NoSuffix)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJD112

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andamplifiers.

DCCOM

Dc Components

MJD112

TO-251/TO-252-2 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●Complementarydarlingtonpowertransistors dpakforsurfacemountapplications

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

MJD112

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?HighDCcurrentgain ?Leadformedforsurfacemountapplications(NOsuffix) ?Straightlead(IPAK,“-I”suffix) ?Built-inadamperdiodeatE-C ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Desi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD112

Silicon NPN epitaxial planer Transistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighDCCurrentGain ?Built-inadamperdiode

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

MJD112

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

CDIL

Continental Device India Limited

MJD112

Silicon NPN Power Transistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD112

Silicon NPN Power Transistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD112

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP112. Applications Mediumpowerswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

MJD112

TRANSISTOR (NPN)

FEATURES ?ComplementaryDarlingtonPowerTransistors DpakforSurfaceMountApplications

FS

First Silicon Co., Ltd

MJD112

Complementary Darlington Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD112

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TGS

Tiger Electronic Co.,Ltd

MJD112

Silicon NPN epitaxial planer Transistors

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

MJD112

TRANSISTOR (NPN)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD112

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD112

Complementary Darlington Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

晶體管資料

  • 型號:

    MJD112

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產廠家:

  • 制作材料:

    Darl

  • 性質:

    低頻或音頻放大 (LF)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數:

    3

  • 可代換的型號:

  • 最大耗散功率:

    20W

  • 放大倍數:

  • 圖片代號:

    G-217

  • vtest:

    0

  • htest:

    999900

  • atest:

    2

  • wtest:

    20

詳細參數

  • 型號:

    MJD112

  • 功能描述:

    達林頓晶體管 2A 100V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
ON
18+
TO-252-2
85600
全新原裝現貨/假一罰百!
詢價
長電
23+
TO-252
750000
一級分銷商
詢價
CJ
23+
TO-252
7050
原廠原裝正品
詢價
CJ/長電
2021+
TO-252
9000
原裝現貨,隨時歡迎詢價
詢價
ST/意法
24+
TO-252
504585
免費送樣原盒原包現貨一手渠道聯系
詢價
ON
23+
TO252
12335
詢價
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
詢價
24+
SOT252
1000
詢價
ON
2016+
TO-252
6528
只做原廠原裝現貨!終端客戶個別型號可以免費送樣品!
詢價
MOT
05+
原廠原裝
2940
只做全新原裝真實現貨供應
詢價
更多MJD112供應商 更新時間2024-10-23 16:01:00