首頁(yè) >MJD122(-1,T4)>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ComplementaryDarlingtonPowerTransistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ComplementaryDarlingtonPowerTransistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ComplementaryDarlingtonPowerTransistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPNSiliconDarlingtonTransistor FEATURES ?HighDCCurrentGain ?ElectricallySimilartoPopularTIP122 ?Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements. | FS First Silicon Co., Ltd | FS | ||
COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited | CDIL | ||
SiliconNPNepitaxialplanerTransistors Features ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?MoistureSensitivityLevel1 ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
COMPLEMENTARYSILICONPOWERDARLINGTONS ComplementaryPowerDarlingtons ForIsolatedPackageApplications Designedforgeneral–purposeamplifiersandswitchingapplications,wherethemountingsurfaceofthedeviceisrequiredtobeelectricallyisolatedfromtheheatsinkorchassis. ?ElectricallySimilartothePopularTI | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERDARLINGTONS ComplementaryPowerDarlingtons ForIsolatedPackageApplications Designedforgeneral–purposeamplifiersandswitchingapplications,wherethemountingsurfaceofthedeviceisrequiredtobeelectricallyisolatedfromtheheatsinkorchassis. ?ElectricallySimilartothePopularTIP122andT | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
COMPLEMENTARYSILICONPOWERDARLINGTONS5.0A,100V,30W ComplementaryPowerDarlingtons ForIsolatedPackageApplications Designedforgeneral?purposeamplifiersandswitchingapplications,wherethemountingsurfaceofthedeviceisrequiredtobeelectricallyisolatedfromtheheatsinkorchassis. Features ?ElectricallySimilartothePopula | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconNPNPowerTransistors DESCRIPTION ?WithTO-220Fpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeMJF127 APPLICATIONS ?Designedforgeneral–purposeamplifier andswitchingapplications. | SAVANTIC Savantic, Inc. | SAVANTIC | ||
ComplementaryPowerDarlingtons Designedforgeneral-purposeamplifiersandswitchingapplications,wherethemountingsurfaceofthedeviceisrequiredtobeelectricallyisolatedfromtheheatsinkorchassis. Features ?ElectricallySimilartothePopularTIP122andTIP127 ?100VCE(sus) ?5.0ARatedCollectorCurrent | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
ComplementaryPowerDarlingtonsForIsolatedPackageApplications Designedforgeneral?purposeamplifiersandswitching applications,wherethemountingsurfaceofthedeviceisrequiredto beelectricallyisolatedfromtheheatsinkorchassis. Features ?ElectricallySimilartothePopularTIP122andTIP127 ?100VCEO(sus) ?5.0ARatedCollectorCurrent | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERDARLINGTONS5.0A,100V,30W ComplementaryPowerDarlingtons ForIsolatedPackageApplications Designedforgeneral?purposeamplifiersandswitchingapplications,wherethemountingsurfaceofthedeviceisrequiredtobeelectricallyisolatedfromtheheatsinkorchassis. Features ?ElectricallySimilartothePopula | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ComplementaryPowerDarlingtonsForIsolatedPackageApplications Designedforgeneral?purposeamplifiersandswitching applications,wherethemountingsurfaceofthedeviceisrequiredto beelectricallyisolatedfromtheheatsinkorchassis. Features ?ElectricallySimilartothePopularTIP122andTIP127 ?100VCEO(sus) ?5.0ARatedCollectorCurrent | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPNPLASTICENCAPSULATETRANSISTORS | WEITRON Weitron Technology | WEITRON | ||
PNPSiliconEpitaxialPlanarTransistor PNPSiliconEpitaxialPlanarTransistor forswitching,interfacecircuitanddrivecircuit applications Features ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司 | SEMTECH_ELEC | ||
PNPDigitalTransistor | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司 | PJSEMI | ||
NPNDigitalTransistor | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司 | PJSEMI | ||
11/16(27mm)SingleTurnWirewoundPrecisionPotentiometer | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-N+Darl+Di
- 性質(zhì):
功率放大 (L)
- 封裝形式:
直插封裝
- 極限工作電壓:
100V
- 最大電流允許值:
8A
- 最大工作頻率:
>4MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
- 最大耗散功率:
20W
- 放大倍數(shù):
β>1000
- 圖片代號(hào):
A-80
- vtest:
100
- htest:
4000100
- atest:
8
- wtest:
20
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MSKSEMI(美森科) |
23+ |
TO-252 |
820 |
三極管/MOS管/晶體管 > 三極管(BJT) |
詢價(jià) | ||
ON |
2016+ |
TO-252 |
6528 |
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品! |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
NA/ |
6250 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
ON大芯片 |
22+ |
TO-252 |
20000 |
深圳原裝現(xiàn)貨正品有單價(jià)格可談 |
詢價(jià) | ||
ON/安森美 |
TO-252 |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ON |
23+ |
SOT-23 |
999999 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ON/安森美 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-252 |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
ST |
23+ |
TO-252 |
16900 |
正規(guī)渠道,只有原裝! |
詢價(jià) |
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