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MJD3055

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●ElectricallySimiartoMJE3055 ●DCCurrentGainSpecifiedto10A

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD3055

Marking:MJD3055XXXX;Package:TO-252-2L;TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

MJD3055

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD3055

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD3055

Complementary Power Transistors

MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?Strai

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4)

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD3055

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix) ?ElectricallySimilartoPopularMJE3055T ?DCCurrentGainSpecifiedto10A ?HighCurrentGain-

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJD3055

isc Silicon NPN Power Transistor

DESCRIPTION ?ExcellentSafeOperatingArea ?Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A ?ComplementtoTypeMJD2955 ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD3055-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD3055-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD3055G

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?1”Suff

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055T4G

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?1”Suff

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055

COMPLEMENTARY POWER TRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD3055

Complementary Power Transistors DPAK For Surface Mount Applications

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055

TRANSISTOR (NPN)

FS

First Silicon Co., Ltd

MJD3055G

Complementary Power Transistors DPAK For Surface Mount Applications

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD3055G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

晶體管資料

  • 型號:

    MJD3055

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Darl

  • 性質(zhì):

    低頻或音頻放大 (LF)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

  • 最大電流允許值:

    10A

  • 最大工作頻率:

    >4MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

  • 最大耗散功率:

    20W

  • 放大倍數(shù):

  • 圖片代號:

    G-127

  • vtest:

    0

  • htest:

    4000100

  • atest:

    10

  • wtest:

    20

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MJD3055

  • 制造商:

    onsemi

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    托盤

  • 晶體管類型:

    NPN

  • 不同?Ib、Ic 時?Vce 飽和壓降(最大值):

    8V @ 3.3A,10A

  • 電流 - 集電極截止(最大值):

    50μA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    20 @ 4A,4V

  • 頻率 - 躍遷:

    2MHz

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    TO-252-3,DPak(2 引線 + 接片),SC-63

  • 供應商器件封裝:

    DPAK

  • 描述:

    TRANS NPN 60V 10A DPAK

供應商型號品牌批號封裝庫存備注價格
CJ
17+
TO-252
6049
全新原裝正品s
詢價
FAIRCHILD/仙童
24+
5000
只做原廠渠道 可追溯貨源
詢價
CJ/長電
2021+
TO-252
9000
原裝現(xiàn)貨,隨時歡迎詢價
詢價
ON/安森美
24+
TO-252
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
CJ/長晶
23+
TO-252-2L
2500
專業(yè)供應MOS/LDO/晶體管/有大量價格低
詢價
ST/FSC
17+
TO-252
6200
詢價
FAIRCHILD
24+
TO-252
36800
詢價
ON
23+
TO-251
3260
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
詢價
STMICROELECTRONICS
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
詢價
FAIRCHILD
24+
原裝進口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
詢價
更多MJD30供應商 更新時間2025-1-13 10:18:00