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IRG4PH50

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRG4PH50K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

INSULATEDGATEBIPOLARTRANSISTOR Features ●Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,VCC=720V,TJ=125°C,VGE=15V ●Combineslowconductionlosseswithhighswitchingspeed ●Latestgenerationdesignprovidestighterparameterdistributionandhigherefficien

IRF

International Rectifier

IRG4PH50KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C,VGE=15V Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneratio

IRF

International Rectifier

IRG4PH50SPBF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PH50U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?Optimizedforpowerconversion;SMPS,UPS and

IRF

International Rectifier

IRG4PH50U

Ultra Fast Speed IGBT

FEATURES ·UltrafastOptimizesforhighoperatingfrequencies ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·Highestefficiencyavailable ·Optimaizedforpowerconversion;UPS,SMPSandwelding

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRG4PH50UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRG4PH50UD

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.56V@IC=20A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRG4PH50UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?UltraFast:Optimizedforhighoperatingfrequenciesupto40kHzinhardswitching,>200kHzinresonantmode ?NewIGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration

IRF

International Rectifier

IRG4PH50UPBF

Ultra Fast Speed IGBT

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?Optimizedforpowerconversion;SMPS,UPS and

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4PH50

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

供應商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
22+
TO-3P
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-3P
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-3P
7000
詢價
IR
63
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
2015+
TO-247AC
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
24+
TO-247
1500
詢價
IR
2015+
TO-247
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR原裝
TO-247
3200
原裝長期供貨!
 詢價
INTERNATIONA
05+
原廠原裝
4366
只做全新原裝真實現(xiàn)貨供應
 詢價
更多IRG4PH50供應商 更新時間2025-1-21 9:02:00

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