零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4PC40W | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat | IRF International Rectifier | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesignandc | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | ||
包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 40A 160W TO247AC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
InsulatedGateBipolarTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
InsulatedGateBipolarTransistor | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A) Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A) Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A) StandardSpeedIGBT Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A) Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode) ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-247ACpackage ?Lead-Free Benefit | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRG4PC40W
- 制造商:
International Rectifier
- 功能描述:
IGBT TO-247
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
13+ |
TO-247 |
10000 |
深圳市勤思達(dá)科技有限公司主營(yíng)IR系列,現(xiàn)貨供應(yīng)IRG4PC40W,全新原裝,正品供應(yīng)。 |
詢價(jià) | ||
IR |
2410+ |
TO-220 |
2000 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
23+ |
TO-247 |
19526 |
詢價(jià) | |||
IR |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
TO-247 |
1000 |
原裝長(zhǎng)期供貨! |
詢價(jià) | |||
IR |
24+ |
TO-3P |
1903 |
詢價(jià) | |||
IR |
23+ |
TO-247 |
8000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
1651 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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