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IRG4PC40W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

IRG4PC40WPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesignandc

IRF

International Rectifier

IRG4PC40WPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC40WPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC40WPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 40A 160W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

IRF

International Rectifier

G4PC40U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A)

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRF

International Rectifier

G4PC40W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

StandardSpeedIGBT Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC40F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC40F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRG4PC40FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC40FPBF

INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode) ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-247ACpackage ?Lead-Free Benefit

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRG4PC40W

  • 制造商:

    International Rectifier

  • 功能描述:

    IGBT TO-247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
13+
TO-247
10000
深圳市勤思達(dá)科技有限公司主營(yíng)IR系列,現(xiàn)貨供應(yīng)IRG4PC40W,全新原裝,正品供應(yīng)。
詢價(jià)
IR
2410+
TO-220
2000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
IR
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
IR
23+
TO-247
19526
詢價(jià)
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價(jià)
IR
TO-247
1000
原裝長(zhǎng)期供貨!
詢價(jià)
IR
24+
TO-3P
1903
詢價(jià)
IR
23+
TO-247
8000
全新原裝現(xiàn)貨
詢價(jià)
IR
24+
原廠封裝
1651
原裝現(xiàn)貨假一罰十
詢價(jià)
更多IRG4PC40W供應(yīng)商 更新時(shí)間2025-1-10 11:03:00