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IRG4PC30KDPBF

INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packaged

IRF

International Rectifier

IRG4PC30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PC30KDPBF

包裝：卷帶（TR） 封裝/外殼：TO-247-3 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 28A 100W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PC30KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevio

IRF

International Rectifier

IRG4PC30S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

StandardSpeedIGBT Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC30S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC30SPBF

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

IRF

International Rectifier

IRG4PC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

UltraFastSpeedIGBT Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?

IRF

International Rectifier

IRG4PC30U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30UD

IGBT

DESCRIPTION ·LowSaturationVoltage ·Anti-ParallelUltraFastDiode ·AvalancheCapability ·InternationalStandardPackage APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries ·WeldingMachines

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRG4PC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

UltraFastCoPackIGBT Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ult

IRF

International Rectifier

IRG4PC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4PC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC30UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC30UPBF

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT

UltraFastSpeedIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Genera

IRF

International Rectifier

IRG4PC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesignandc

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IRG4PC30KDPBF

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    卷帶（TR）

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.7V @ 15V，16A

  • 開關(guān)能量：

    600μJ（開），580μJ（關(guān)）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關(guān)）值：

    60ns/160ns

  • 測試條件：

    480V，16A，23 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應商器件封裝：

    TO-247AC

  • 描述：

    IGBT 600V 28A 100W TO247AC

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-247-3
173
詢價
IR
23+
TO-247AC
7750
全新原裝優(yōu)勢
 詢價
Infineon
18+
NA
3663
進口原裝正品優(yōu)勢供應
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
24+
65230
詢價
Infineon
1931+
N/A
542
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
INFINEON/英飛凌
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
INFINEON
1809+
TO-247
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
542
加我QQ或微信咨詢更多詳細信息,
 詢價
更多IRG4PC30KDPBF供應商 更新時間2025-1-10 16:30:00

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