| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersthe | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-205AF) Description TheHEXFET?technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE | IRF International Rectifier | IRF | ||
N-ChannelEnhancement-ModePowerMOSField-EffectTransistors 5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
IEEE802.3afCompatible IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
AvalancheRuggedTechnology FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
AdvancedPowerMOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str | IRF International Rectifier | IRF | ||
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR120,SiHFR120) ?Straightlead(IRFU120,SiHFU120) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
N-channelEnhancementModePowerMOSFET Features ?VDS=100V,ID=18.1A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
96 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 | ||||
IR |
22+ |
N/A |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
N/A |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
N/A |
7000 |
詢價 | |||
IR |
2023+ |
DIP-4 |
2480 |
十五年行業(yè)誠信經(jīng)營,專注全新正品 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
DIP-4 |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
IR |
2015+ |
HEXDIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
DISCRETE |
100 |
SIX |
11300 |
詢價 | |||
13+ |
DIP-4 |
2100 |
特價熱銷現(xiàn)貨庫存 |
詢價 | |||
VISHAY |
15+ |
HVMDIP-4(HEXDIP-4) |
25600 |
原裝正品長期供貨，如假包賠包換 徐小姐13714450367 |
詢價 |
相關規(guī)格書
更多- IRFD123
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更多- IRFD210
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- IRFIBE30G
- IRFL014TR
- IRFL110TR
- IRFL210TR
- IRFL4105
- IRFL4310TR
- IRFL9014TR
- IRFP044
- IRFP048
- IRFP054
- IRFP064
- IRFP140
- IRFP150
- IRFP150NPBF
- IRFP240
- IRFP250N
- IRFP254
- IRFP260N
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- IRFP350
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- IRFP448
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- IRFP450PBF
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- IRFP9140N
- IRFPC40
- IRFPC60
