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IRFB4310ZPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPo

IRF

International Rectifier

IRFB4310ZPBF

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRFB4310ZPBF

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRFB4310ZPBF

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB4310ZPBF_15

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRFL4310

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=1.6A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFL4310

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFL4310PBF

HEXFET?PowerMOSFET(VDSS=100V,RDS(on)=0.20廓,ID=1.6A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFL4310PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL4310TR

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFB4310ZPBF

  • 功能描述：

    MOSFET MOSFT 100V 127A 6mOhm 120nC Qg

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-220
20540
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-220
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON
新年份
N/A
20000
原裝現(xiàn)貨,質量保證,可出樣品可開稅票
 詢價
INFINEON/IR
1907+
NA
400
20年老字號,原裝優(yōu)勢長期供貨
 詢價
INFINEON
22+
TO-220
25000
原裝正品可支持驗貨,歡迎咨詢
 詢價
Infineon Technologies
24+
TO-220AB
30000
晶體管-分立半導體產品-原裝正品
 詢價
23+
TO-220
30000
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
IR
16+
TO-220
36000
原裝正品,優(yōu)勢庫存81
 詢價
IR
23+
TO-220AB
65400
詢價
INFINEON
20+
TO-220
50000
詢價
更多IRFB4310ZPBF供應商 更新時間2025-1-23 10:45:00

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