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INA110BG

Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA110KP

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA110KP

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA110KU

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA110KU

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA110SG

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA110SG

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

IQCM-110

OCXOSpecification

IQD

IQD Frequency Products Ltd

IQXO-110

Frequency1.0MHzto800.0MHz

IQD

IQD Frequency Products Ltd

IQXV-110

VCXOSpecification

IQD

IQD Frequency Products Ltd

IRFD110

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.0A)

IRF

International Rectifier

IRFD110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110

1A,100V,0.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°COperatingTemperature ?Fastswitchingandeaseofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Third

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE110

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE110

SimpleDriveRequirements

IRF

International Rectifier

IRFE110

MultipleSmall-SignalTransistors

Motorola

Motorola, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    INA110BG

  • 制造商:

    BB

  • 制造商全稱:

    BB

  • 功能描述:

    Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TI/德州儀器
23+
AUCDIP
22800
原盒原標(biāo),正品現(xiàn)貨,誠(chéng)信經(jīng)營(yíng),假一罰十
詢價(jià)
TI
2023+
DIP
3500
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價(jià)
BB
06+
原廠原裝
4283
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
2017+
DIP
6528
只做原裝正品假一賠十!
詢價(jià)
BB
23+
DIP
1010
特價(jià)庫(kù)存
詢價(jià)
BB
24+
DIP
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
BURR-BROWN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
BB
2021+
CDIP-16
1600
自家?guī)齑?百分之百原裝
詢價(jià)
BB
22+23+
DIP
70981
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
BB
23+
DIP
65480
詢價(jià)
更多INA110BG供應(yīng)商 更新時(shí)間2024-11-15 10:16:00