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INA110KP

Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA110KP

Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER

TI1Texas Instruments

德州儀器

INA110KPG4

Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER

TI1Texas Instruments

德州儀器

INA110KU

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA110KU

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器

INA110SG

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA110SG

Fast-SettlingFET-InputINSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器

IQCM-110

OCXOSpecification

IQD

IQD Frequency Products Ltd

IQXO-110

Frequency1.0MHzto800.0MHz

IQD

IQD Frequency Products Ltd

IQXV-110

VCXOSpecification

IQD

IQD Frequency Products Ltd

IRFD110

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.0A)

IRF

International Rectifier

IRFD110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110

1A,100V,0.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°COperatingTemperature ?Fastswitchingandeaseofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Third

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE110

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE110

SimpleDriveRequirements

IRF

International Rectifier

IRFE110

MultipleSmall-SignalTransistors

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號：

    INA110KP

  • 功能描述：

    儀表放大器 Fast-Settling FET-In Very High Accuracy

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 輸入補償電壓：

    150 V

  • 最大輸入電阻：

    10 kOhms

  • 共模抑制比（最小值）：

    88 dB

  • 工作電源電壓：

    2.7 V to 36 V

  • 電源電流：

    200 uA

  • 最大工作溫度：

    + 125 C

  • 最小工作溫度：

    - 40 C

  • 封裝/箱體：

    MSOP-8

  • 封裝：

    Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
Texas Instruments
24+
DIP-16
23926
TI優(yōu)勢主營型號-原裝正品
 詢價
BB
DIP-16+
1400
全新原裝絕對優(yōu)勢現(xiàn)貨特價!
 詢價
TI/BB
2020+
DIP16P
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
TI/德州儀器
22+
DIP-16
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
BURR-BROWN
24+
DIP-16
141
只做原廠渠道 可追溯貨源
 詢價
TI/德州儀器
23+
DIP
22800
原盒原標(biāo),正品現(xiàn)貨,誠信經(jīng)營,假一罰十
 詢價
Texas Instruments
22+
DIP-16
18000
TI優(yōu)勢渠道,大量原裝庫存現(xiàn)貨,交期快,歡迎詢價。
 詢價
TI
21+
DIP
8080
原裝現(xiàn)貨實單必成 只做原裝！
 詢價
TI/BB
23+
DIP-16
213
正規(guī)渠道,只有原裝!
 詢價
BB/TI
24+
DIP16
5125
全新原裝現(xiàn)貨,歡迎詢購!!
 詢價
更多INA110KP供應(yīng)商 更新時間2024-12-29 10:12:00

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