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IQXO-110

Frequency 1.0MHz to 800.0MHz

IQD

IQD Frequency Products Ltd

IQXV-110

VCXOSpecification

IQD

IQD Frequency Products Ltd

IRFD110

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.0A)

IRF

International Rectifier

IRFD110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110

1A,100V,0.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°COperatingTemperature ?Fastswitchingandeaseofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Third

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE110

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE110

SimpleDriveRequirements

IRF

International Rectifier

IRFE110

MultipleSmall-SignalTransistors

Motorola

Motorola, Inc

IRFF110

3.5A,100V,0.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF110

PowerMOSField-EffectTransistors

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?Majoritycarrierdevice

GESS

GE Solid State

IRFF110

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF110

IM-CHANIMELPOWERMOSFETsTO-39PACKAGE

TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFG110

POWERMOSFETTHRU-HOLE(MO-036AB)

IRF

International Rectifier

IRFG110

14LEADDUALINLINEQUAD

SEME-LAB

Seme LAB

IRFG110

SimpleDriveRequirements

IRF

International Rectifier

IRFG110

POWERMOSFETTHRU-HOLE(MO-036AB)

IRF

International Rectifier

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C-MACFREQUENCYPRODUCTS
23+
10000
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GGK
25
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AMK
23+
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9888
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C-MACFREQUENCYPRODUCTS
21+
35200
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jauch
24+
500000
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2023+
SMD
7261
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2500
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2021+
SMD
100500
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CMAC
69
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CMAC
23+
589610
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理!
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更多IQXO-110供應(yīng)商 更新時間2024-11-15 17:29:00