IRFD110中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFD110規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 1A, 100V
? rDS(ON) = 0.600?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FUJITSU/富士通 |
23+ |
NA/ |
135 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
21+ |
DIP4 |
5000 |
全新原裝現(xiàn)貨 價格優(yōu)勢 |
詢價 | ||
IR |
23+ |
DIP-4 |
9896 |
詢價 | |||
IR |
23+ |
DIP-4 |
6500 |
全新原裝假一賠十 |
詢價 | ||
VISH |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
IR |
2020+ |
DIP-4 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
24+ |
HEXDIP |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IOR |
24+ |
CDIP4 |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅！！ |
詢價 | ||
IR |
23+ |
DIP4 |
3000 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
