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HGTG30N60A4

600V, SMPS Series N-Channel IGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG30N60A4

600V, SMPS Series N-Channel IGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG30N60A4

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 75A TO247-3

ONSEMION Semiconductor

安森美半導體安森美半導體公司

HGTG30N60A4D

600V, SMPS Series N-Channel IGBT with

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG30N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar

Intersil

Intersil Corporation

HGTG30N60A4D

N-Channel IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.6V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

HGTG30N60A4D

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 75A 463W TO247

ONSEMION Semiconductor

安森美半導體安森美半導體公司

G30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

G30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60A4D

600V,SMPSSeriesN-ChannelIGBTwith

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HGTG30N60A4

  • 制造商：

    onsemi

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.6V @ 15V，30A

  • 開關(guān)能量：

    280μJ（開），240μJ（關(guān)）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關(guān)）值：

    25ns/150ns

  • 測試條件：

    390V，30A，3 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247-3

  • 描述：

    IGBT 600V 75A TO247-3

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi/安森美
新批次
TO-247
4500
詢價
onsemi(安森美)
23+
TO-247
1224
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
Fairchild(飛兆/仙童)
2023+
N/A
4550
全新原裝正品
 詢價
FAIRCHILD/仙童
24+
TO3P
154634
明嘉萊只做原裝正品現(xiàn)貨
 詢價
仙童
06+
TO-247
6000
原裝庫存
 詢價
FAIRCHIL
23+
TO-247
8600
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
2016+
TO247
5562
只做進口原裝現(xiàn)貨!或訂貨!假一賠十!
 詢價
FAIRCHILD
23+
TO-247
9526
詢價
FSC
2015+
TO-247
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
ONSemiconductor
18+
NA
3567
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
更多HGTG30N60A4供應(yīng)商 更新時間2024-11-1 16:18:00

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