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HGTG5N120BND

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG5N120BND

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTG5N120BND

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-247-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT NPT 1200V 21A TO247-3

ONSEMION Semiconductor

安森美半導體安森美半導體公司

HGTG5N120CND

25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP5N120

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP5N120

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP5N120BN

21A,1200V,NPTSeriesN-ChannelIGBTs

TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco

Intersil

Intersil Corporation

HGTP5N120BND

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP5N120BND

21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP5N120CN

25A,1200V,NPTSeriesN-ChannelIGBT

TheHGTP5N120CNandHGT1S5N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc

Intersil

Intersil Corporation

HGTP5N120CND

25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

SGH5N120RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswhe

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGH5N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

STP5N120

N-channel1200V-2.8廓-4.4A-TO-220Zener-protectedSuperMESHTMPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

STP5N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

UG5N120

NPTN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODES

UTCUnisonic Technologies

友順友順科技股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    HGTG5N120BND

  • 制造商:

    onsemi

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • IGBT 類型:

    NPT

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.7V @ 15V,5A

  • 開關(guān)能量:

    450μJ(開),390μJ(關(guān))

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關(guān))值:

    22ns/160ns

  • 測試條件:

    960V,5A,25 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應商器件封裝:

    TO-247-3

  • 描述:

    IGBT NPT 1200V 21A TO247-3

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO247
8950
BOM配單專家,發(fā)貨快,價格低
詢價
onsemi/安森美
新批次
TO-247
4500
詢價
FSC
2020+
TO-3P
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ONSemi
1939
TO-247
10200
全新原裝公司現(xiàn)貨
詢價
ON/安森美
21+
TO-247
6000
原裝正品
詢價
ON
22+
TO-247
9000
只做原裝 假一賠十
詢價
ON/安森美
23+
TO-247-3
4050
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
Fairchil
24+
TO-247
7295
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
詢價
仙童
24+
NA
6800
詢價
ON/安森美
2021+
TO-247
9000
原裝現(xiàn)貨,隨時歡迎詢價
詢價
更多HGTG5N120BND供應商 更新時間2024-11-1 16:36:00