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HGTG30N60A4D

600V, SMPS Series N-Channel IGBT with

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar

Intersil

Intersil Corporation

HGTG30N60A4D

N-Channel IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.6V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

HGTG30N60A4D

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 75A 463W TO247

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

G30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60A4D

600V,SMPSSeriesN-ChannelIGBTwith

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG30N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    HGTG30N60A4D

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.6V @ 15V,30A

  • 開(kāi)關(guān)能量:

    280μJ(開(kāi)),240μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開(kāi)/關(guān))值:

    25ns/150ns

  • 測(cè)試條件:

    390V,30A,3 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247-3

  • 描述:

    IGBT 600V 75A 463W TO247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi/安森美
新批次
TO-247
4500
詢價(jià)
onsemi(安森美)
23+
TO-247
928
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價(jià)
原裝
24+
標(biāo)準(zhǔn)
51884
熱賣(mài)原裝進(jìn)口
詢價(jià)
ON
23+
TO-247
8000
原裝正品,假一罰十
詢價(jià)
FAIRCHILD/仙童
24+
TO-247-3
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
詢價(jià)
ONSENI
2019
NA
1350
全新原裝!優(yōu)勢(shì)庫(kù)存熱賣(mài)中!
詢價(jià)
FAIRCHILDONSEMICONDUCTOR
21+
NA
28
只做原裝,假一罰十
詢價(jià)
ONSEMI
21+
18
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
FSC
23+
TO-247
6800
一級(jí)分銷商
詢價(jià)
FAIRCHIL
24+
TO-247
5125
全新原裝現(xiàn)貨,歡迎詢購(gòu)!!
詢價(jià)
更多HGTG30N60A4D供應(yīng)商 更新時(shí)間2024-11-1 16:18:00