首頁 >HGTG12N60A4D>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HGTG12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
HGTG12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | Intersil Intersil Corporation | Intersil | |
HGTG12N60A4D | 包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 54A 167W TO247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
HGTG12N60A4D
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.7V @ 15V,12A
- 開關(guān)能量:
55μJ(開),50μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開/關(guān))值:
17ns/96ns
- 測(cè)試條件:
390V,12A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
IGBT 600V 54A 167W TO247
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Fairchild(飛兆/仙童) |
2023+ |
N/A |
4550 |
全新原裝正品 |
詢價(jià) | ||
仙童 |
05+ |
TO-247 |
6000 |
原裝進(jìn)口 |
詢價(jià) | ||
FAIRCHLD |
23+ |
TO-247 |
3260 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購! |
詢價(jià) | ||
FAI |
24+ |
TO-3P |
68 |
詢價(jià) | |||
Fairchild |
23+ |
TO-3P |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
FAIRCHILD |
23+ |
TO-247 |
9526 |
詢價(jià) | |||
FAIRCHI |
23+ |
TO-247 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
INTESIL |
23+ |
TO-3P |
8000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
FSC |
18+ |
TO-3P |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
FAIRCHI |
21+ |
TO-247 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) |
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