首頁 >HGTP12N60A4D>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | Intersil Intersil Corporation | Intersil | |
HGTP12N60A4D | 包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 54A TO220-3 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | Intersil Intersil Corporation | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
產(chǎn)品屬性
- 產(chǎn)品編號:
HGTP12N60A4D
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.7V @ 15V,12A
- 開關(guān)能量:
55μJ(開),50μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時 Td(開/關(guān))值:
17ns/96ns
- 測試條件:
390V,12A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220-3
- 描述:
IGBT 600V 54A TO220-3
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220 |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 | ||
onsemi(安森美) |
23+ |
TO-220 |
1471 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO-220-3 |
3580 |
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價 |
詢價 | ||
FAI |
24+ |
TO-220 |
9150 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
詢價 | |||
FAIRCHIL |
24+ |
TO-220 |
8866 |
詢價 | |||
FAIRCHILD |
06+ |
原廠原裝 |
4416 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
FAIRCHIL |
23+ |
TO-220 |
3200 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
FSC |
2016+ |
TO220 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
FAIRCHIL |
23+ |
TO-220 |
9960 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 |
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