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首頁 >HGTP5N120CNS>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
5N120	文件：451.43 Kbytes Page：7 Pages	5A,1200VN-CHANNELPOWERMOSFET ?DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. ?FEATURES0 RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A LowReverseTransferCapacitance *FastSwitchingCapabilit	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC
5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTG5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP5N120	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120BN	文件：82.52 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTs TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco	Intersil Intersil Corporation	Intersil
HGTP5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120CN	文件：80.54 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBT TheHGTP5N120CNandHGT1S5N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	Intersil Intersil Corporation	Intersil
HGTP5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
SGH5N120RUF	文件：464.69 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswhe	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
SGH5N120RUFD	文件：513.9 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
STP5N120	文件：186.55 Kbytes Page：10 Pages	N-channel1200V-2.8廓-4.4A-TO-220Zener-protectedSuperMESHTMPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP5N120	文件：296.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
UG5N120	文件：288.53 Kbytes Page：3 Pages	NPTN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODES	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC

詳細(xì)參數(shù)

型號：
HGTP5N120CNS
功能描述：
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳廊盛科技有限公司	HGTP5N120CN功率三極管	FAIRCHILD/仙童	22+	TO-220	50000	原裝正品.假一罰十	詢價
深圳市科芯源微電子有限公司	HGTP5N120CN功率三極管	FAIRCHILD/仙童	24+	TO220	58000	全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!	詢價
深圳兆威電子有限公司	HGTP5N120功率三極管	INTERSIL	23+	TO-220	90000	只做原廠渠道價格優(yōu)勢可提供技術(shù)支持	詢價
現(xiàn)代芯城（深圳）科技有限公司	HGTP6N40E1D		24+	N/A	78000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市富芯樂電子科技有限公司	HGTP6N40EID	HAR	22+	NA	27003	全新原裝正品現(xiàn)貨	詢價
深圳市星佑電子有限公司	HGTP6N50E1D	FAIRCHILD	05+	原廠原裝	5070	只做全新原裝真實現(xiàn)貨供應(yīng)	詢價
瀚佳科技(深圳)有限公司	HGTP6N50E1D	FAIRCHILD	21+		35200	一級代理/放心采購	詢價
深圳市威爾健半導(dǎo)體有限公司	HGTP6N50E1D	FAIRCHILD/仙童	23+	TO-220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市得捷芯城科技有限公司	HGTP6N50E1D	FAIRCHILD/仙童	23+	NA/	3750	原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	HGTP7N60	FAIRCHILD/仙童	23+	TO-220	110500	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價

更多HGTP5N120CNS供應(yīng)商更新時間2024-11-1 16:16:00

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