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IRF1010EZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZS

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EZS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EZSPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSTRLP

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HG-S1010R

  • 制造商：

    Panasonic Industrial Automation Sales

  • 類別：

    傳感器，變送器 > 位置傳感器 - 角度、線性位置測量

  • 系列：

    HG-S

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 用于測量：

    線性位置

  • 技術(shù)：

    光學(xué)

  • 線性范圍：

    0 ~ 10mm（0 ~ 0.39"）

  • 致動器類型：

    圓形軸

  • 電壓 - 供電：

    24V

  • 安裝類型：

    面板安裝

  • 端接樣式：

    連接器

  • 工作溫度：

    -10°C ~ 55°C

  • 封裝/外殼：

    模塊

  • 描述：

    SENSOR LINEAR 10MM CONNECTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
Panasonic
2010+
N/A
66
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
PANASONIC(松下)
2447
Module
115000
1個/袋一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排
 詢價
PANASONIC
20+
傳感器
96
就找我吧!--邀您體驗愉快問購元件!
 詢價
PANASONIC(松下)
2021+
Module
499
詢價
PANASONIC(松下)
24+
7350
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
24+
N/A
76000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
ADI/亞德諾
20+
DIP
8596
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
ADI/亞德諾
22+
66900
原封裝
 詢價
ADI/亞德諾
00+
DIP
1
原裝現(xiàn)貨支持BOM配單服務(wù)
 詢價
ADI/亞德諾
QQ咨詢
DIP
104
全新原裝 研究所指定供貨商
 詢價
更多HG-S1010R供應(yīng)商 更新時間2025-6-10 10:19:00

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