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IRF1010EZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZS

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EZS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EZSPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSTRLP

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    HG-S1010R

  • 制造商:

    Panasonic Industrial Automation Sales

  • 類別:

    傳感器,變送器 > 位置傳感器 - 角度、線性位置測(cè)量

  • 系列:

    HG-S

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 用于測(cè)量:

    線性位置

  • 技術(shù):

    光學(xué)

  • 線性范圍:

    0 ~ 10mm(0 ~ 0.39")

  • 致動(dòng)器類型:

    圓形軸

  • 電壓 - 供電:

    24V

  • 安裝類型:

    面板安裝

  • 端接樣式:

    連接器

  • 工作溫度:

    -10°C ~ 55°C

  • 封裝/外殼:

    模塊

  • 描述:

    SENSOR LINEAR 10MM CONNECTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Panasonic
2010+
N/A
66
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PANASONIC(松下)
2447
Module
115000
1個(gè)/袋一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排
詢價(jià)
PANASONIC
20+
傳感器
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
PANASONIC(松下)
2021+
Module
499
詢價(jià)
PANASONIC(松下)
24+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價(jià)
24+
N/A
76000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
ADI/亞德諾
20+
DIP
8596
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
ADI/亞德諾
22+
66900
原封裝
詢價(jià)
ADI/亞德諾
00+
DIP
1
原裝現(xiàn)貨支持BOM配單服務(wù)
詢價(jià)
ADI/亞德諾
QQ咨詢
DIP
104
全新原裝 研究所指定供貨商
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更多HG-S1010R供應(yīng)商 更新時(shí)間2025-6-10 10:19:00