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IRF1010EZSTRLP規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF1010EZSTRLP
- 功能描述：
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
25 |
TO-263-2 |
6000 |
原裝正品 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
IR |
22+ |
SOT-263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
Infineon/英飛凌 |
24+ |
TO-263-2 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
INFINEON/英飛凌 |
24+ |
NA/ |
5600 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IOR |
24+ |
TO263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
25+23+ |
TO263 |
74131 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
20+ |
TO-263 |
5600 |
詢價 | |||
Infineon/英飛凌 |
21+ |
TO-263-2 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 |
