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IRF1010EZPBF規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF1010EZPBF
- 功能描述：
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
23+ |
TO-220 |
48470 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | |||
VB |
21+ |
TO-220AB |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon |
22+ |
NA |
1175 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Infineon/英飛凌 |
24+ |
TO-220AB |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
Infineon |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
IR |
1521+ |
TO-220 |
1000 |
只做原裝正品 |
詢價 | ||
Infineon/英飛凌 |
24+ |
TO-220AB |
8000 |
只做原裝，歡迎詢價，量大價優(yōu) |
詢價 | ||
IR |
2223+ |
TO-220 |
26800 |
只做原裝正品假一賠十為客戶做到零風險 |
詢價 | ||
IR |
1923+ |
TO-220 |
5000 |
正品原裝品質(zhì)假一賠十 |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-220AB |
6820 |
只做原裝,質(zhì)量保證 |
詢價 |
