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IRF1010ELPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF1010ELPBF
廠商型號(hào)

IRF1010ELPBF

功能描述

HEXFET Power MOSFET

文件大小

218.72 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱(chēng)

IRF

中文名稱(chēng)

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-13 22:58:00

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IRF1010ELPBF規(guī)格書(shū)詳情

Description

Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010EL) is available for low profile applications.

● Advanced Process Technology

● Surface Mount (IRF1010ES)

● Low-profile through-hole (IRF1010EL)

● 175°C Operating Temperature

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRF1010ELPBF

  • 制造商:

    IRF

  • 制造商全稱(chēng):

    International Rectifier

  • 功能描述:

    HEXFET Power MOSFET

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