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IRF1010EZSPBF規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF1010EZSPBF
- 功能描述:
MOSFET 60V 1 N-CH HEXFET 8.5mOhms 58nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
標準封裝 |
12048 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。 |
詢價 | ||
Infineon(英飛凌) |
24+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
IR |
24+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
D2PAK(TO263) |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
IR/INFINEON |
16+ |
TO-263 |
200 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
IR |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR/INFINEON |
16+ |
TO-263 |
300 |
只做進口原裝假一賠百 |
詢價 | ||
IR |
24+ |
TO-263 |
400 |
詢價 | |||
VBsemi |
24+ |
TO263 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 |