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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FTA02N60C	文件：54.71 Kbytes Page：6 Pages	N-Channel Enhancement InPowerProductLines	ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商	ETC1
GE02N60	文件：252.05 Kbytes Page：5 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET	ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司	ETL
GE02N60	文件：248.6 Kbytes Page：5 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGE02N60providethedesignerwiththebestcombinationoffastswitching. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplications.ThedeviceissuitedforDC-DC,DC-ACconvertersfortelecom,industrialandconsumerenvironment. Features *Dynami	GTM 勤益投資控股股份有限公司	GTM
GM02N60D/U	文件：468.13 Kbytes Page：10 Pages	MinisizeofDiscretesemiconductorelements	ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商	ETC1
H02N60	文件：74.96 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60E	文件：74.96 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60F	文件：74.96 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60I	文件：74.96 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60J	文件：74.96 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60S	文件：77.67 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60SE	文件：77.67 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60SF	文件：77.67 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60SI	文件：77.67 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
H02N60SJ	文件：77.67 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
M02N60	文件：169.16 Kbytes Page：5 Pages	NChannelMOSFET FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature	STANSON Stanson Technology	STANSON
M02N60B	文件：221.2 Kbytes Page：5 Pages	NChannelMOSFET FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature	STANSON Stanson Technology	STANSON
NDD02N60Z	文件：299.63 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NDD02N60Z	文件：146.41 Kbytes Page：10 Pages	N-ChannelPowerMOSFET600V,4.8	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NDF02N60Z	文件：168.55 Kbytes Page：10 Pages	N-ChannelPowerMOSFET600V,4.0	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
NDF02N60Z	文件：148.07 Kbytes Page：10 Pages	N-ChannelPowerMOSFET	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市海天鴻電子科技有限公司	FTA02N60C	IPS	1708+	TO-220F	8500	只做原裝進(jìn)口,假一罰十	詢(xún)價(jià)
深圳市華斯頓科技有限公司	FTA02N60C	IPS	22+23+	TO-220	22503	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	FTA02N60C	IPS	19+	TO-220	9860	一級(jí)代理	詢(xún)價(jià)
深圳兆威電子有限公司	FTA02N60C	VB	2019	TO-220F	55000	絕對(duì)原裝正品假一罰十!	詢(xún)價(jià)
深圳市新力誠(chéng)科技有限公司	FTA02N60C	IPS	2020+	TO-220F	50970	公司代理品牌,原裝現(xiàn)貨超低價(jià)清倉(cāng)!	詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	FTA02N60C	IPS	22+	TO-220F	5623	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢(xún)價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	FTA02N60C	I	23+	TO-220F	10000	公司只做原裝正品	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	FTA02N60C	IPS	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	FTA02N60C	IPS	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	FTA02N60C	IPS	2022+	TO-220F	32500	原廠代理終端免費(fèi)提供樣品	詢(xún)價(jià)

更多FTA02N60C供應(yīng)商更新時(shí)間2024-10-24 15:10:00

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