H02N60SI中文資料華昕數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
H02N60SI規(guī)格書(shū)詳情
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
?Robust High Voltage Termination
?Avalanc he Energy Specified
?Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
?Diode is Characterized for Use in Bridge Circuits
?IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
H02N60SI
- 制造商：
HSMC
- 制造商全稱：
HSMC
- 功能描述：
N-Channel Power Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
YUAN |
1948+ |
SIP4 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
SOT-163 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
H |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
A |
24+ |
b |
8 |
詢價(jià) | |||
H |
24+ |
TO-252 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
H |
TO-252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
H |
22+ |
TO-252 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
華昕 |
23+ |
TO251 |
28888 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
24+ |
N/A |
48000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
FUJ |
ROHS |
13352 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) |
