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H02N60SJ

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M02N60

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M02N60B

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

NDD02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDF02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60ZG

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60ZG

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

NDF02N60ZG

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60ZG

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60ZH

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60ZH

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDP02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDP02N60ZG

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDT02N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PJM02N60SA

N-EnhancementModeFieldEffectTransistor

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

SDU02N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    H02N60SJ

  • 制造商:

    HSMC

  • 制造商全稱:

    HSMC

  • 功能描述:

    N-Channel Power Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
H
23+
TO-252
10000
公司只做原裝正品
詢價(jià)
H
22+
TO-252
6000
十年配單,只做原裝
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H
23+
TO-252
6000
原裝正品,支持實(shí)單
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H
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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H
24+
TO-252
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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N/A
48000
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A
24+
b
8
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SOT-163
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
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FUJ
ROHS
13352
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
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HUMPHREY
3
全新原裝 貨期兩周
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更多H02N60SJ供應(yīng)商 更新時(shí)間2025-1-15 14:30:00