H02N60SJ中文資料華昕數(shù)據(jù)手冊PDF規(guī)格書
H02N60SJ規(guī)格書詳情
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
?Robust High Voltage Termination
?Avalanc he Energy Specified
?Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
?Diode is Characterized for Use in Bridge Circuits
?IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
H02N60SJ
- 制造商：
HSMC
- 制造商全稱：
HSMC
- 功能描述：
N-Channel Power Field Effect Transistor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
YUAN |
1948+ |
SIP4 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
FUJ |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
SOT-163 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
YUAN |
23+ |
SIP4 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
YUAN |
2048+ |
SIP4 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
A |
24+ |
b |
8 |
詢價 | |||
HUMPHREY |
新 |
3 |
全新原裝 貨期兩周 |
詢價 | |||
金升陽 |
900 |
詢價 | |||||
MORNSUN/金升陽 |
2021+ |
SIP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
H |
22+ |
TO-252 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 |
