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BFR182TW

isc Silicon NPN RF Transistor

DESCRIPTION ·Forlownoiseandhighgainbroadbandamplifiers atcollectorcurrentsfrom1mAto20mA. ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lownoisefigure ·Highpowergain

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFR182TW

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ???Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.

VishayVishay Siliconix

威世科技威世科技半導體

BFR182TW

Silicon NPN Planar RF Transistor

VishayVishay Siliconix

威世科技威世科技半導體

BFR182W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR182W

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?fT=8GHzF=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR182W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR182W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.4dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY182

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH182

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當科技亞當科技股份有限公司

BLF182XR

PowerLDMOStransistor

Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit

AmpleonAmpleon USA Inc.

安譜隆

BLF182XRS

PowerLDMOStransistor

Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit

AmpleonAmpleon USA Inc.

安譜隆

BTS-EL182S

GuardsagainstaccidentaldisconnectionofComputers,PDU’s,ServersandmostNetworkDevices.

BURLAND

Burland Technology Solutions

C-182-K

CoilsandChokesforgeneraluse

PREMOPREMO CORPORATION S.L

普萊默

CM182

B-6DoubleContactBayonetBase

B-6DoubleContactBayonetBase&G-2MidgetScrewBase&G-31/2MiniatureBayonetBase

CML

Chicago Miniature Lamp,inc

詳細參數(shù)

  • 型號：

    BFR182TW

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Silicon NPN Planar RF Transistor

供應商型號品牌批號封裝庫存備注價格
VISHAY
2023+
SOT-323
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
VISHAY
23+
SMD
5177
現(xiàn)貨
 詢價
24+
N/A
62000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
VISHAY
24+
SOT-323
33200
新進庫存/原裝
 詢價
vishay
23+
NA
11486
專做原裝正品,假一罰百!
 詢價
只做原裝
24+
SOT323
36520
一級代理/放心采購
 詢價
VISHAY
21+
SOT343
1850
原裝現(xiàn)貨假一賠十
 詢價
VISHAY/威世
23+
SOT323
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY
23+
SOT343
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
2022
SOT323
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多BFR182TW供應商 更新時間2024-12-29 8:00:00

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