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BFR183TF

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183TW

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183W

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentfrom2mAto30mA)

NPNSiliconRFTransistor ?Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz F=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR183W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFY183

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.3dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY183ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH183

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

BLF183XR

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BLF183XRS

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BMP183

Digitalpressuresensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

BTP-183XXCQ-XX-XX

BriLux1WLightSource

DBLECTRODB Lectro Inc

迪貝電子

CTCVCF-183J

PowerCoatedInductors-Axial

CT

Central Technologies

詳細(xì)參數(shù)

  • 型號(hào):

    BFR183TF

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Silicon NPN Planar RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VISHAY/威世
23+
SOT-23
87000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
VISHAY
24+
SOT-23
9200
新進(jìn)庫存/原裝
詢價(jià)
VISHAY
2020+
SOT23-3
160
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
VISHAY
21+
SOT23
3000
原裝現(xiàn)貨假一賠十
詢價(jià)
VISHAY/威世
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
VISHAY/威世
23+
SOT23
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
VISHAY/威世
2022
SOT-23
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
VISHAY/威世
05+
SOT23
3000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
VISHAY
SOT23-3
53650
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
詢價(jià)
VISHAY/威世
23+
SOT-23
98000
詢價(jià)
更多BFR183TF供應(yīng)商 更新時(shí)間2024-12-29 11:10:00