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BFR19

Medium Power Amplifiers and Switches

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BFR193

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHzF=1.3dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR193

NPN Silicon RF Transistor

NPNBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193

NPN Bipolar RF Transistor

NPNBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193E6327

NPN Bipolar RF Transistor

NPNBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193F

NPN Silicon RF Transistor

NPNSiliconRFTransistor* ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,F=1dBat900MHz ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdescription

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193L3

NPN Silicon RF Transistor

NPNSiliconRFTransistor* ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,F=1dBat900MHz ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdescription

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193T

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?HightransitionfrequencyfT=8GHz ?Excellentlarge-signalbehaviour ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Forlow-noise,high-gainapplicationssuchaspoweramplifiersupto2GHzandf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR193T

NPN Silicon RF Transistor

NPNSiliconRFTransistor Preliminarydata ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz F=1.3dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193TF

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages. Feature

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR193TW

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?HightransitionfrequencyfT=8GHz ?Excellentlarge-signalbehaviour ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Forlow-noise,high-gainapplicationssuchaspoweramplifiersupto2GHzandf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR193W

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz F=1.3dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR193W

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR194

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

PNPSiliconRFTransistor ?Forlowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA ?Complementarytype:BFR106(NPN)

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR193

Low Noise Silicon Bipolar RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193

NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193_07

NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193_14

Low Noise Silicon Bipolar RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193F

Low Noise Silicon Bipolar RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR193F_13

Low Noise Silicon Bipolar RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

晶體管資料

  • 型號(hào):

    BFR19

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_TR

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    75V

  • 最大電流允許值:

    1A

  • 最大工作頻率:

    100MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BC140,BC141,BCY55,BSX45,BSY83,BSY84,2N1990,2N2102,2N2405,3DG182B,

  • 最大耗散功率:

    0.8W

  • 放大倍數(shù):

  • 圖片代號(hào):

    C-40

  • vtest:

    75

  • htest:

    100000000

  • atest:

    1

  • wtest:

    0.8

詳細(xì)參數(shù)

  • 型號(hào):

    BFR19

  • 功能描述:

    Medium Power Amplifiers and Switches

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MOT
24+
CAN3
450000
詢價(jià)
MOT/ST/PH
2339+
CAN3
21322
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
PH/ST/MOT
2023+
CAN
50000
全新原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
SOT-323
2500
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
Infineon
24+
SOT-323
3600
絕對(duì)原裝!現(xiàn)貨熱賣!
詢價(jià)
INFINEON
23+
SC75
7936
詢價(jià)
INFINEON
16+
SOT23
3000
原裝現(xiàn)貨假一罰十
詢價(jià)
INFINEON
17+
SOT-23
6200
100%原裝正品現(xiàn)貨
詢價(jià)
INFINEO
2020+
TSLP-3-
14944
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
INFINEON
23+
SOT323-3
5000
原裝正品,假一罰十
詢價(jià)
更多BFR19供應(yīng)商 更新時(shí)間2024-12-28 16:30:00