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BFR183F

NPN Silicon RF Transistor

NPNSiliconRFTransistor* ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA ?fT=8GHz,F=0.9dBat900MHz *Shorttermdescription

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183T

NPNSiliconRFTransistor

Preliminarydata ?Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz F=1.2dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183T

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183TF

SiliconNPNPlanarRFTransistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183TW

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183W

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentfrom2mAto30mA)

NPNSiliconRFTransistor ?Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz F=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR183W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFY183

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.3dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFY183ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH183

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

BLF183XR

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BLF183XRS

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

詳細(xì)參數(shù)

  • 型號(hào):

    BFR183F

  • 制造商:

    INFINEON

  • 制造商全稱:

    Infineon Technologies AG

  • 功能描述:

    NPN Silicon RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
INFINEON/英飛凌
23+
393000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
SIE
23+
SMD
5177
現(xiàn)貨
詢價(jià)
INFINEON/英飛凌
23+
12000
詢價(jià)
INFINEON
23+
TSFP-3
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
TSFP-3
7000
詢價(jià)
INFINEON/英飛凌
23+
TSLP-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
INFINEON/英飛凌
2022
TSLP-3
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
Infineon/英飛凌
23+
20000
全新、原裝、現(xiàn)貨
詢價(jià)
INFINEON/英飛凌
23+
NA/
989
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
詢價(jià)
更多BFR183F供應(yīng)商 更新時(shí)間2024-12-28 9:02:00