STD10NM60N

Marking：10NM60N；Package：DPAK；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STF10NM60N

Marking：10NM60N；Package：TO-220FP；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STI10NM60N

Marking：10NM60N；Package：I2PAK；N-channel 600 V, 0.53 Ω typ.,10 A MDmesh? II Power MOSFET in I2PAK package

Features ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh?technology.ThisrevolutionaryPower MOSFET

STP10NM60N

Marking：10NM60N；Package：TO-220；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STU10NM60N

Marking：10NM60N；Package：IPAK；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STD10NM60ND

Marking：10NM60ND；Package：DPAK；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STF10NM60ND

Marking：10NM60ND；Package：TO-220FP；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STP10NM60ND

Marking：10NM60ND；Package：TO-22；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis