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STD10NM60ND

絲印:10NM60ND;Package:DPAK;N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD10NM60ND

N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a DPAK package; ? Fast-recovery body diode \n? Low gate charge and input capacitance \n? Low on-resistance RDS(on) \n? 100% avalanche tested \n? High dv/dt ruggedness;

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.\n\n

STSTMicroelectronics

意法半導體意法半導體集團

STF10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

STI10NM60N

N-channel600V,0.53Ωtyp.,10AMDmesh?IIPowerMOSFETinI2PAKpackage

Features ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh?technology.ThisrevolutionaryPower MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP10NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

STP10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP10NM60N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

技術參數(shù)

  • Package:

    DPAK

  • Packing Type:

    Tape And Reel

  • Marketing Status:

    Active

  • ECCN (EU):

    NEC

  • ECCN (US):

    EAR99

  • Country of Origin:

    CHINA

  • More info:

    MORE INFO

供應商型號品牌批號封裝庫存備注價格
原裝
25+
TO-252
20300
原裝特價STD10NM60ND即刻詢購立享優(yōu)惠#長期有貨
詢價
ST
23+
TO252
6996
只做原裝正品現(xiàn)貨
詢價
ST
23+
TO252
1830000
原裝正品!假一罰十!
詢價
ST/意法半導體
22+
TO-252-3
6003
原裝正品現(xiàn)貨 可開增值稅發(fā)票
詢價
ST(意法半導體)
24+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
ST
17+
TO-252
6200
100%原裝正品現(xiàn)貨
詢價
STMicroelectronics
24+
NA
3000
進口原裝正品優(yōu)勢供應
詢價
ST
25+23+
TO220
20983
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ST
19+
TO-252
32000
原裝正品,現(xiàn)貨特價
詢價
更多STD10NM60ND供應商 更新時間2025-7-29 16:33:00