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STD10NM60ND中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
STD10NM60ND |
功能描述 | N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) |
絲印標識 | |
封裝外殼 | DPAK |
文件大小 |
1.2278 Mbytes |
頁面數(shù)量 |
19 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導體】 |
中文名稱 | 意法半導體集團官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-1-19 23:00:00 |
STD10NM60ND規(guī)格書詳情
Description
This FDmesh? II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt avalanche capabilities
Applications
■ Switching applications
產(chǎn)品屬性
- 型號:
STD10NM60ND
- 功能描述:
MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
6250 |
原廠直銷,現(xiàn)貨供應,賬期支持! |
詢價 | ||
ST |
2020+ |
TO-252 |
15000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ST(意法半導體) |
23+ |
TO252 |
6000 |
誠信服務,絕對原裝原盤 |
詢價 | ||
ST/意法半導體 |
21+ |
TO-252-3 |
8860 |
原裝現(xiàn)貨,實單價優(yōu) |
詢價 | ||
ST |
TO252 |
6369 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
22+23+ |
TO220 |
20983 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
ST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ST/意法半導體 |
21+ |
TO-252-3 |
8860 |
只做原裝,質(zhì)量保證 |
詢價 | ||
ST(意法半導體) |
23+ |
TO-252 |
9555 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ST |
17+ |
TO-252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |