零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MULTILAYERCHIPVARISTORS Feature VaristorVoltagefrom12Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection | UNSEMIUN Semiconducctor INC 優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司 | UNSEMI | ||
SiliconNPNepitaxialplanartype SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard | PanasonicPanasonic Corporation 松下松下電器 | Panasonic | ||
SiliconNPNepitaxialplanertransistor SiliconNPNepitaxialplanertransistor Forswitching/digitalcircuits ■Features ●Twoelementsincorporatedintoonepackage. (Transistorswithbuilt-inresistor) ●Reductionofthemountingareaandassemblycostbyonehalf. ■BasicPartNumberofElement ●UNR1210(UN1210)×2elemen | PanasonicPanasonic Corporation 松下松下電器 | Panasonic | ||
SwitchmodeFullPlasticDualUltrafastPowerRectifiers | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
N-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?GenIIIPowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
MultilayerCeramicChipCapacitors | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforHighReliabilityApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorSolutionsforBoardflexSensitiveApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforTCCCriticalApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsProhibitSurfaceArc-overinHighVoltageApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsProhibitSurfaceArc-overinHighVoltageApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforHighReliabilityApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-ChannelEnhancement-ModeVerticalDMOSPowerFETs? AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX |
詳細(xì)參數(shù)
- 型號(hào):
UN1210Q
- 功能描述:
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
23+ |
TO-92L |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | |||
Panasonic/松下 |
24+ |
SOT-323 |
9200 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
Panasonic |
21+ |
SOT-323 |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
PANASON |
2023+ |
SOT-423 |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
Panasonic/ |
2022 |
SOT-323 |
9200 |
全新原裝現(xiàn)貨熱賣(mài) |
詢價(jià) | ||
Panasonic |
22+23+ |
Sot-323 |
27758 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
PANASONIC/松下 |
23+ |
TO92 |
9800 |
全新原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
22+ |
SMD |
7500 |
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電! |
詢價(jià) | |||
優(yōu)恩半導(dǎo)體 |
21+ |
DIP |
300 |
全新原裝鄙視假貨15118075546 |
詢價(jià) | ||
QUALCOMM/高通 |
BGA |
6000 |
原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端可賬期 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- UN1210R
- UN1211
- UN1213
- UN1215
- UN1215R
- UN1216
- UN1216R
- UN1217
- UN1217R
- UN1218
- UN121D
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- UN1719
- UN2003AI
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- UN2111
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- UN2114TX
- UN2115Q
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- UN2116Q
- UN2116S
- UN2117Q
- UN2117S
- UN2119
- UN211E
- UN211H
- UN211M
- UN211T
- UN211Z
- UN2121/2122/2123/2124/212X/212Y
- UN2123
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相關(guān)庫(kù)存
更多- UN1210S
- UN1212
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- UN1215Q
- UN1215S
- UN1216Q
- UN1216S
- UN1217Q
- UN1217S
- UN1219
- UN121E
- UN121K
- UN1221
- UN1223
- UN-1420-S-0750
- UN1518_10
- UN1518G-AE3-R
- UN1596
- UN1596L-AA3-R
- UN2003A
- UN206
- UN2110Q
- UN2110S
- UN2112
- UN2114
- UN2115
- UN2115R
- UN2116
- UN2116R
- UN2117
- UN2117R
- UN2118
- UN211D
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- UN211L
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