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首頁(yè) >UN2110R>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
UNR2110	文件：443.54 Kbytes Page：17 Pages	SiliconPNPepitaxialplanartype SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
UPG2110TB	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPG2110TB	文件：149.27 Kbytes Page：3 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz	CEL California Eastern Labs	CEL
UTCM2110	文件：93.83 Kbytes Page：3 Pages	LINEARINTEGRATEDCIRCUIT	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC
V2110B	文件：46.53 Kbytes Page：1 Pages	Finger-shapedheatsinkTO-126	ASSMANN ASSMANN WSW COMPONENTS	ASSMANN
VDA2110CTA	文件：1.30402 Mbytes Page：18 Pages	Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein	ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司	ANASEM
VDA2110NTA	文件：1.30402 Mbytes Page：18 Pages	Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein	ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司	ANASEM
VN2110	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN2110ND	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VP2110	文件：761.51 Kbytes Page：14 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
VP2110	文件：512.809 Kbytes Page：5 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi	SUTEX Supertex, Inc	SUTEX
VP2110	文件：456.67 Kbytes Page：4 Pages	P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda	SUTEX Supertex, Inc	SUTEX
VP2110ND	文件：456.67 Kbytes Page：4 Pages	P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda	SUTEX Supertex, Inc	SUTEX
WEBR2110FXGS-D	文件：301.33 Kbytes Page：8 Pages	WaterproofCircularConnectorsforSolderTerminationsMeetingIP67	DDK DDK Ltd.	DDK
WEBR2110FYGS-D	文件：301.33 Kbytes Page：8 Pages	WaterproofCircularConnectorsforSolderTerminationsMeetingIP67	DDK DDK Ltd.	DDK
WEBR2110FZGS-D	文件：301.33 Kbytes Page：8 Pages	WaterproofCircularConnectorsforSolderTerminationsMeetingIP67	DDK DDK Ltd.	DDK
WEBR2110MXGS-D	文件：301.33 Kbytes Page：8 Pages	WaterproofCircularConnectorsforSolderTerminationsMeetingIP67	DDK DDK Ltd.	DDK
WEBR2110MYGS-D	文件：301.33 Kbytes Page：8 Pages	WaterproofCircularConnectorsforSolderTerminationsMeetingIP67	DDK DDK Ltd.	DDK
WEBR2110MZGS-D	文件：301.33 Kbytes Page：8 Pages	WaterproofCircularConnectorsforSolderTerminationsMeetingIP67	DDK DDK Ltd.	DDK
WSP2110	文件：483.49 Kbytes Page：7 Pages	VOCGasSensor	WINSENZhengzhou Winsen Electronics Technology Co., Ltd. 煒盛電子鄭州煒盛電子科技有限公司	WINSEN

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型號(hào)：
UN2110R
功能描述：
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	UN2110-R	Panasonic/松下	24+	SOT-23	8900	新進(jìn)庫(kù)存/原裝	詢價(jià)
UN2110-R	Panasonic	21+	SOT-23	6000	絕對(duì)原裝現(xiàn)貨	詢價(jià)
深圳市芯誠(chéng)實(shí)創(chuàng)科技有限公司	UN2110-R	Panasonic/	2022	SOT-23	8900	全新原裝現(xiàn)貨熱賣	詢價(jià)
深圳市佳鑫美電子科技有限公司	UN2110-R(TX)	PANASONIC	24+	SOT-23	4897	絕對(duì)原裝!現(xiàn)貨熱賣!	詢價(jià)
深圳市華來(lái)深電子有限公司	UN2110-R(TX)	Panason	23+	SOT-23	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	UN2110-R(TX)	PANASONIC/松下	23+	SOT-23	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市得捷芯城科技有限公司	UN2110-R(TX)	PANASON/松下	23+	NA/	9250	原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票	詢價(jià)
深圳市吉中創(chuàng)電子科技有限公司	UN2110-R(TX)	PANASONIC/松下	23+	SOT-23	6000	只做原裝歡迎咨詢	詢價(jià)
深圳市振宏微科技有限公司	UN2110-R(TX),KRA761U,PT2312	SOT-23	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳廊盛科技有限公司	UN2110-R/S	PANASONIC/松下	23+	SOT-23	20000	原裝正品歡迎咨詢	詢價(jià)

更多UN2110R供應(yīng)商更新時(shí)間2024-12-24 16:00:00

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